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 JMnic
Product Specification
Silicon PNP Power Transistors
2SA715
DESCRIPTION With TO-126 package Complement to type 2SC1162 APPLICATIONS Low frequency power amplifier applications
PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION
Absolute Maximun Ratings (Ta=25ae )
SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Ta=25ae PC Collector power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature 10 150 -55~150 ae ae CONDITIONS Open emitter Open base Open collector VALUE -35 -35 -5 -2.5 -3 0.75 W UNIT V V V A A
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-10mA; RBE= IC=-1mA ;IE=0 IE=-1mA ;IC=0 IC=-2.0A ;IB=-0.2A(Pulse test) IC=-1.5A;VCE=-2V(Pulse test) VCB=-35V; IE=0 IC=-0.5A ; VCE=-2V IC=-1.5A ; VCE=-2V(Pulse test) IC=-0.2A ; VCE=-2V(Pulse test) 60 20 160 MIN -35 -35 -5 -0.5 -1.0 TYP.
2SA715
SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBE ICBO hFE-1 hFE-2 fT
MAX
UNIT V V V
-1.0 -1.5 -20 320 |I
V V A
MHz
hFE-1 Classifications B 60-120 C 100-200 D 160-320
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA715
Fig.2 Outline dimensions
3
JMnic
Product Specification
Silicon PNP Power Transistors
2SA715
4


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